Qualcomm has officially presented its next-gen premium-tier mobile processor – Qualcomm Snapdragon 835, built in collaboration with Samsung Electronics. The new SoC is built using Samsung’s 10nm FinFET process tech which is superior to the 14nm process used by the Snapdragon 820/821 SoCs.
Compared to the 14nm FinFET process technology, Samsung’s 10nm process node offers up to 30-percent increase in area efficiency with 27-percent higher performance or up to 40-percent low power consumption compared to the previous version. It also contributes to the smaller footprint of the chip, giving room for larger batteries or slimmer designs in devices.
Commenting on the launch, senior vice president, product management, Qualcomm Technologies, Keith Kressin said;
“We are excited to continue working together with Samsung in developing products that lead the mobile industry. Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices.”
On arrival, the Qualcomm Snapdragon 835 will sit ahead of the the likes of Snapdragon 820 and 821. It also would be the first to support Qualcomm’s latest charging technology – the Quick Charge 4.0 (20-percent faster than the Quick Charge 3.0). Detailed information about the SD835 has not been announced, as it is still in production stage however, it is expected to make debut in devices arriving by the first half of 2017 (H2 2017).
