At the CES 2017, Qualcomm has announced the full specifications of the flagship Qualcomm Snapdragon 835, as expected. The Samsung co-produced processor is ahead of the Snapdragon 820 and Snapdragon 821, and will be available in commercial devices sometimes in the first half of 2017.
Based on Samsung’s 10nm ‘10LPE’ FInFET process, the Qualcomm Snapdragon 835 is 30% physically smaller than the Snapdragon 820 and contains more than 3 billion transistors. In addition to mobile devices – smartphones and tablets, the processor is expected to also power AR and VR devices.
The 835 includes the Qualcomm Kryo 280 CPU, Adreno 540 GPU (improves 3D performance by 25%) and the Hexagon 682 DSP will handle machine learning and other repetitive tasks. It consumes 25% less power and Qualcomm’s Quick Charge 4.0 technology will be on-board to deliver faster charging times (5 hours of talk time in about 5 minutes). It is also compliant with USB-Type-C delivery.
The Qualcomm Snapdragon 835 is integrated with the Snapdragon X16 LTE modem with Global Mode, support for 802.11ad multi-gigabit as well as 2×2 MIMO 802.11ac Wi-Fi, Bluetooth 5.0 and Qualcomm Spectra Image Sensor Processor (14-bit dual-ISP) supports up to 32MP single or dual 16MP cameras.
The Qualcomm Haven security suite is engineered to support three layers of security – at the processor, device and systems levels. It supports facial recognition, fingerprint and iris scanning, and other security features designed to protect personal information.
